MJD6036T4. Аналоги и основные параметры

Наименование производителя: MJD6036T4

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 20 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Ёмкость коллекторного перехода (Cc): 200 pf

Статический коэффициент передачи тока (hFE): 1000

Корпус транзистора: TO252

 Аналоги (замена) для MJD6036T4

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MJD6036T4 даташит

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MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or http //onsemi.com driver stages in applications such as switching regulators, convertors, and power amplifiers. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES, (No S

 8.2. Size:178K  onsemi
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MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or http //onsemi.com driver stages in applications such as switching regulators, convertors, and power amplifiers. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES, (No S

 8.3. Size:199K  inchange semiconductor
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isc Silicon NPN Darlington Power Transistor MJD6039 DESCRIPTION Collector Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) High DC Current Gain- h = 500(Min)@I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

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Другие транзисторы: MJD47-1, MJD47T4, MJD50, MJD50-1, MJD50T4, MJD5731, MJD6036, MJD6036-1, A940, MJD6039, MJD6039-1, MJD6039T4, MJE101, MJE102, MJE103, MJE104, MJE105