MJD6039 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJD6039
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Capacitancia de salida (Cc): 100 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO251

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MJD6039 Datasheet (PDF)

..1. Size:270K motorola
mjd6036r mjd6039.pdf

Order this documentMOTOROLAby MJD6036/DSEMICONDUCTOR TECHNICAL DATANPNMJD6036Complementary Darlington PNPMJD6039Power TransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output or driver stagesSILICONin applications such as switching regulators, convertors, and power amplifiers.POWER TRANSISTORS Lead Formed for Su

..2. Size:199K inchange semiconductor
mjd6039.pdf

isc Silicon NPN Darlington Power Transistor MJD6039DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High DC Current Gain-: h = 500(Min)@I = 2AFE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a

0.1. Size:178K onsemi
mjd6039t4g.pdf

MJD6039, NJVMJD6039T4GDarlington PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output orhttp://onsemi.comdriver stages in applications such as switching regulators, convertors,and power amplifiers.SILICON FeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES,(No S

0.2. Size:178K onsemi
njvmjd6039t4g.pdf