MJE1660
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE1660
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar MJE1660
MJE1660
Datasheet (PDF)
9.1. Size:276K motorola
mje16204.pdf
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mje16106.pdf
Order this documentMOTOROLAby MJE16106/DSEMICONDUCTOR TECHNICAL DATAMJE16106Designer's Data SheetNPN Silicon Power TransistorPOWER TRANSISTORSSwitchmode Bridge Series8 AMPERES400 VOLTS. . . specifically designed for use in half bridge and full bridge off line converters.100 AND 125 WATTS Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability
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mje16002.pdf
Order this documentMOTOROLAby MJE16002/DSEMICONDUCTOR TECHNICAL DATA*MJE16002Designer's Data Sheet*MJE16004SWITCHMODE SeriesNPN Silicon Power Transistors*Motorola Preferred DeviceThese transistors are designed for highvoltage, highspeed switching of inductive5.0 AMPEREcircuits where fall time and RBSOA are critical. They are particularly wellsuited forN
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mje16004.pdf
isc Silicon NPN Power Transistor MJE16004DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed switching ofinductive circuits where fall time and RBSOA are critical.they are particularly wel
Otros transistores... 2N3200
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