MJE1660 Specs and Replacement
Type Designator: MJE1660
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO126
MJE1660 Substitution
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MJE1660 datasheet
Order this document MOTOROLA by MJE16204/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MJE16204 SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors POWER TRANSISTORS The MJE16204 is a state of the art SWITCHMODE bipolar power transistor. It is 6.0 AMPERES specifically designed for use in horizontal deflection circuits f... See More ⇒
Order this document MOTOROLA by MJE16002/D SEMICONDUCTOR TECHNICAL DATA * MJE16002 Designer's Data Sheet * MJE16004 SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high voltage, high speed switching of inductive 5.0 AMPERE circuits where fall time and RBSOA are critical. They are particularly well suited for N... See More ⇒
Detailed specifications: MJE15028 , MJE15029 , MJE15030 , MJE15031 , MJE16002 , MJE16004 , MJE16106 , MJE16204 , TIP142 , MJE1661 , MJE170 , MJE171 , MJE172 , MJE180 , MJE18002 , MJE18004 , MJE18006 .
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