MJE1660
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE1660
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 15
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 3
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO126
MJE1660
Transistor Equivalent Substitute - Cross-Reference Search
MJE1660
Datasheet (PDF)
9.1. Size:276K motorola
mje16204.pdf
Order this documentMOTOROLAby MJE16204/DSEMICONDUCTOR TECHNICAL DATADesigner's Data SheetMJE16204SCANSWITCHNPN Bipolar Power Deflection TransistorFor High and Very High Resolution MonitorsPOWER TRANSISTORSThe MJE16204 is a stateoftheart SWITCHMODE bipolar power transistor. It is6.0 AMPERESspecifically designed for use in horizontal deflection circuits f
9.2. Size:380K motorola
mje16106.pdf
Order this documentMOTOROLAby MJE16106/DSEMICONDUCTOR TECHNICAL DATAMJE16106Designer's Data SheetNPN Silicon Power TransistorPOWER TRANSISTORSSwitchmode Bridge Series8 AMPERES400 VOLTS. . . specifically designed for use in half bridge and full bridge off line converters.100 AND 125 WATTS Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability
9.3. Size:425K motorola
mje16002.pdf
Order this documentMOTOROLAby MJE16002/DSEMICONDUCTOR TECHNICAL DATA*MJE16002Designer's Data Sheet*MJE16004SWITCHMODE SeriesNPN Silicon Power Transistors*Motorola Preferred DeviceThese transistors are designed for highvoltage, highspeed switching of inductive5.0 AMPEREcircuits where fall time and RBSOA are critical. They are particularly wellsuited forN
9.5. Size:195K inchange semiconductor
mje16004.pdf
isc Silicon NPN Power Transistor MJE16004DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed switching ofinductive circuits where fall time and RBSOA are critical.they are particularly wel
Datasheet: 2SA1771
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