MJE182 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJE172MJE182COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type)are silicon Epitaxial Planar, complementarytransistors in Jedec SOT-32 plastic package.They are designed for low power audio amplifier12and low current, high speed switching3applicatio

MJE180/181/182Low Power Audio Amplifier Low Current High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : MJE180 60 V : MJE181 80 V : MJE182 100 V VCEO Collector-Emitter Voltage : MJE180 40 V : MJE181 60 V

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc Silicon NPN Power Transistor MJE182DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 80 VCEO(SUS)DC Current Gain: h = 30(Min) @ I = 0.5 AFE C= 12(Min) @ I = 1.5 ACComplement to the PNP MJE172Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow power audio amplifierLow current high speed switchin

Order this documentMOTOROLAby MJE18206/DSEMICONDUCTOR TECHNICAL DATAMJE18206Designer's Data SheetMJF18206SWITCHMODE NPN BipolarPower Transistor for ElectronicPOWER TRANSISTORSLight Ballast and Switching8 AMPERES1200 VOLTSPower Supply Applications40 and 100 WATTSThe MJE/MJF18206 have an application specific stateoftheart die dedicated tothe electron

Order this documentMOTOROLAby MJE18204/DSEMICONDUCTOR TECHNICAL DATAMJE18204Designer's Data SheetMJF18204SWITCHMODE NPN BipolarPower Transistor for ElectronicPOWER TRANSISTORSLight Ballast and Switching5 AMPERES1200 VOLTSPower Supply Applications35 and 75 WATTSThe MJE/MJF18204 have an application specific stateoftheart die dedicated tothe electroni

MJE172MJE182COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type)are silicon epitaxial planar, complementarytransistors in Jedec SOT-32 plastic package, theyare designed for low power audio amplifier andlow current, high speed switching applications.123SOT-3

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60

MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -