MJE182 Todos los transistores

 

MJE182 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE182

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50 MHz

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar MJE182

 

MJE182 Datasheet (PDF)

0.1. mje18204.pdf Size:484K _motorola

MJE182
MJE182

Order this documentMOTOROLAby MJE18204/DSEMICONDUCTOR TECHNICAL DATAMJE18204Designer's Data SheetMJF18204SWITCHMODE NPN BipolarPower Transistor for ElectronicPOWER TRANSISTORSLi

0.2. mje18206.pdf Size:504K _motorola

MJE182
MJE182

Order this documentMOTOROLAby MJE18206/DSEMICONDUCTOR TECHNICAL DATAMJE18206Designer's Data SheetMJF18206SWITCHMODE NPN BipolarPower Transistor for ElectronicPOWER TRANSISTORSLi

 0.3. mje172-mje182.pdf Size:54K _st

MJE182
MJE182

MJE172MJE182COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type)are silicon epitaxial planar, complementarytransistors in Jedec SOT-32 plastic package, theyare designed for low power audio amplifier andlow current, high speed switching applications.123SOT-3

0.4. mje172 mje182.pdf Size:51K _st

MJE182
MJE182

MJE172MJE182COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type)are silicon Epitaxial Planar, complementarytransistors in Jedec SOT-32 plastic package.They are designed for low power audio amplifier12and low current, high speed switching3applicatio

 0.5. mje180 mje181 mje182.pdf Size:48K _fairchild_semi

MJE182
MJE182

MJE180/181/182Low Power Audio Amplifier Low Current High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : MJE180 60 V : MJE181 80 V : MJE182 100 V VCEO Collector-Emitter Voltage : MJE180 40 V : MJE181 60 V

0.6. mje182g.pdf Size:124K _onsemi

MJE182
MJE182

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60

0.7. mje170 mje171 mje172 mje180 mje181 mje182.pdf Size:82K _onsemi

MJE182
MJE182

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M

0.8. mje182.pdf Size:213K _inchange_semiconductor

MJE182
MJE182

isc Silicon NPN Power Transistor MJE182DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 80 VCEO(SUS)DC Current Gain: h = 30(Min) @ I = 0.5 AFE C= 12(Min) @ I = 1.5 ACComplement to the PNP MJE172Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow power audio amplifierLow current high speed switchin

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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