Справочник транзисторов. MJE182

 

Биполярный транзистор MJE182 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJE182
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 12 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 40 pf
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: TO126

 Аналоги (замена) для MJE182

 

 

MJE182 Datasheet (PDF)

 ..1. Size:51K  st
mje172 mje182.pdf

MJE182
MJE182

MJE172MJE182COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type)are silicon Epitaxial Planar, complementarytransistors in Jedec SOT-32 plastic package.They are designed for low power audio amplifier12and low current, high speed switching3applicatio

 ..2. Size:48K  fairchild semi
mje180 mje181 mje182.pdf

MJE182
MJE182

MJE180/181/182Low Power Audio Amplifier Low Current High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : MJE180 60 V : MJE181 80 V : MJE182 100 V VCEO Collector-Emitter Voltage : MJE180 40 V : MJE181 60 V

 ..3. Size:82K  onsemi
mje170 mje171 mje172 mje180 mje181 mje182.pdf

MJE182
MJE182

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M

 ..4. Size:166K  onsemi
mje180 mje181 mje182.pdf

MJE182
MJE182

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..5. Size:213K  inchange semiconductor
mje182.pdf

MJE182
MJE182

isc Silicon NPN Power Transistor MJE182DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 80 VCEO(SUS)DC Current Gain: h = 30(Min) @ I = 0.5 AFE C= 12(Min) @ I = 1.5 ACComplement to the PNP MJE172Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow power audio amplifierLow current high speed switchin

 0.1. Size:504K  motorola
mje18206.pdf

MJE182
MJE182

Order this documentMOTOROLAby MJE18206/DSEMICONDUCTOR TECHNICAL DATAMJE18206Designer's Data SheetMJF18206SWITCHMODE NPN BipolarPower Transistor for ElectronicPOWER TRANSISTORSLight Ballast and Switching8 AMPERES1200 VOLTSPower Supply Applications40 and 100 WATTSThe MJE/MJF18206 have an application specific stateoftheart die dedicated tothe electron

 0.2. Size:484K  motorola
mje18204.pdf

MJE182
MJE182

Order this documentMOTOROLAby MJE18204/DSEMICONDUCTOR TECHNICAL DATAMJE18204Designer's Data SheetMJF18204SWITCHMODE NPN BipolarPower Transistor for ElectronicPOWER TRANSISTORSLight Ballast and Switching5 AMPERES1200 VOLTSPower Supply Applications35 and 75 WATTSThe MJE/MJF18204 have an application specific stateoftheart die dedicated tothe electroni

 0.3. Size:54K  st
mje172-mje182.pdf

MJE182
MJE182

MJE172MJE182COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type)are silicon epitaxial planar, complementarytransistors in Jedec SOT-32 plastic package, theyare designed for low power audio amplifier andlow current, high speed switching applications.123SOT-3

 0.4. Size:124K  onsemi
mje182g.pdf

MJE182
MJE182

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60

 0.5. Size:119K  onsemi
mje170g mje171g mje172g mje180g mje181g mje182g.pdf

MJE182
MJE182

MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top