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MJE205K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE205K

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 65 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 25

Empaquetado / Estuche: TO220

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MJE205K Datasheet (PDF)

5.1. mje200g.pdf Size:115K _update

MJE205K
MJE205K

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http://onsemi.com Features 5.0 AMPERES • Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - COMPLEMENTARY SILICON hFE

5.2. mje200re.pdf Size:255K _motorola

MJE205K
MJE205K

Order this document MOTOROLA by MJE200/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE200 Plastic Transistors PNP . . . designed for low voltage, lowpower, highgain audio amplifier applications. * MJE210 CollectorEmitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc *Motorola Preferred Device High DC Current Gain hFE = 70 (Min) @ IC = 50

5.3. mje200.pdf Size:42K _fairchild_semi

MJE205K
MJE205K

MJE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitt

5.4. mje200 mje210.pdf Size:115K _onsemi

MJE205K
MJE205K

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http://onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE = 70 (M

5.5. mje200.pdf Size:227K _inchange_semiconductor

MJE205K
MJE205K

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE200 DESCRIPTION ·Low Collector–Emitter Saturation Voltage- ·DC Current Gain-Bandwidth Product ·High DC Current Gain ·Complement to MJE210 APPLICATIONS ·Designed for low voltage, low-power, high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNI

Otros transistores... MJE2011 , MJE202 , MJE2020 , MJE2021 , MJE203 , MJE204 , MJE205 , MJE2050 , S8050 , MJE2090 , MJE2091 , MJE2092 , MJE2093 , MJE210 , MJE2100 , MJE2101 , MJE2102 .

 


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