MJE205K Datasheet PDF and Equivalents Search

 9.1. Size:255K  motorola

 mje200re.pdf

Order this document MOTOROLA by MJE200/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE200 Plastic Transistors PNP . . . designed for low voltage, low power, high gain audio amplifier applications. * MJE210 Collector Emitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc *Motorola Preferred Device High DC Current Gain hFE = 7... See More ⇒

 9.2. Size:42K  fairchild semi

 mje200.pdf

MJE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz @ IC=100mA (Min.) Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V ... See More ⇒

 9.3. Size:115K  onsemi

 mje200 mje210.pdf

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE ... See More ⇒

 9.4. Size:164K  onsemi

 mje200g mje210g.pdf

MJE200G (NPN), MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES High DC Current Gain POWER TRANSISTORS Low Collector-Emitter Saturation Voltage COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc... See More ⇒

 9.5. Size:115K  onsemi

 mje200g.pdf

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE ... See More ⇒

 9.6. Size:213K  inchange semiconductor

 mje200.pdf

isc Silicon NPN Power Transistor MJE200 DESCRIPTION Collector Emitter Sustaining Voltage- V = 25V(Min) CEO(SUS) DC Current Gain- h = 70(Min) @ I = 500mA FE C Low Collector-Emitter Saturation Voltage- VCE(sat)= 0.3V(Max)@ I = 500mA C High Current-Gain Bandwidth Product fT= 65MHz(Min) @ I = 100mA C Minimum Lot-to-Lot variations for robust device performance and ... See More ⇒