MJE2092 Todos los transistores

 

MJE2092 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE2092
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de MJE2092

   - Selección ⓘ de transistores por parámetros

 

MJE2092 Datasheet (PDF)

 9.1. Size:255K  motorola
 mje200re.pdf pdf_icon

MJE2092

Order this documentMOTOROLAby MJE200/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon Power*MJE200Plastic TransistorsPNP. . . designed for low voltage, lowpower, highgain audio amplifier applications.*MJE210 CollectorEmitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc*Motorola Preferred Device High DC Current Gain hFE = 7

 9.2. Size:42K  fairchild semi
 mje200.pdf pdf_icon

MJE2092

MJE200Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) Complement to MJE210TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V

 9.3. Size:115K  onsemi
 mje200 mje210.pdf pdf_icon

MJE2092

MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE

 9.4. Size:164K  onsemi
 mje200g mje210g.pdf pdf_icon

MJE2092

MJE200G (NPN),MJE210G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES High DC Current GainPOWER TRANSISTORS Low Collector-Emitter Saturation VoltageCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc

MOSTRAR MÁS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SA697 | 2SA566 | ASY75 | 2SC1913A | BC338-01 | BC131B | 2SA5153

 

 
Back to Top

 


 
.