MJE2361 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE2361

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 375 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO126

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MJE2361 datasheet

 8.1. Size:98K  motorola
 mje2360t.pdf pdf_icon

MJE2361

Order this document MOTOROLA by MJE2360T/D SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS . . . useful for general purpose, high voltage applications requiring high fT. NPN SILICON Collector Emitter Sustaining Voltage 350 VOLTS VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc 30 WATTS DC Current Gain

 8.2. Size:215K  inchange semiconductor
 mje2360t.pdf pdf_icon

MJE2361

isc Silicon NPN Power Transistor MJE2360T DESCRIPTION Collector Emitter Sustaining Voltage- V = 350 V(Min) CEO(SUS) DC Current Gain- h = 25(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 100mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier

Otros transistores... MJE230, MJE231, MJE232, MJE233, MJE234, MJE235, MJE2360, MJE2360T, 2SC2073, MJE2361T, MJE2370, MJE2371, MJE240, MJE241, MJE242, MJE243, MJE244