MJE2361 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE2361
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 375 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO126
MJE2361 Transistor Equivalent Substitute - Cross-Reference Search
MJE2361 Datasheet (PDF)
mje2360t.pdf
Order this documentMOTOROLAby MJE2360T/DSEMICONDUCTOR TECHNICAL DATAMJE2360TMJE2361TNPN Silicon High-VoltageTransistor0.5 AMPEREPOWER TRANSISTORS. . . useful for generalpurpose, high voltage applications requiring high fT.NPN SILICON CollectorEmitter Sustaining Voltage 350 VOLTSVCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc30 WATTS DC Current Gain
mje2360t.pdf
isc Silicon NPN Power Transistor MJE2360TDESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 350 V(Min)CEO(SUS)DC Current Gain-: h = 25(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 100mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low power audio amplifier
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
