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MJE270 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE270
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 6 MHz
   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: TO126

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MJE270 Datasheet (PDF)

 ..1. Size:101K  onsemi
mje270 mje271.pdf

MJE270
MJE270

MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab

 ..2. Size:520K  cdil
mje270 71.pdf

MJE270
MJE270

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package MJE270, MJE271MJE270 NPN PLASTIC POWER TRANSISTORMJE271 PNP PLASTIC POWER TRANSISTORMedium Power Darlingtons for Linear and Switching ApplicationsPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BASE123ALL DIMENSIONS IN MMABSOLUTE MAXIMUM RATINGSCollect

 0.1. Size:109K  motorola
mje270re.pdf

MJE270
MJE270

Order this documentMOTOROLAby MJE270/DSEMICONDUCTOR TECHNICAL DATANPNMJE270Complementary Silicon PowerPNPMJE271Transistors. . . designed specifically for use with the MC3419 SolidState Subscriber LoopInterface Circuit (SLIC). High Safe Operating Area 2.0 AMPEREIS/B @ 40 V, 1.0 s = 0.375 A TO126 COMPLEMENTARY CollectorEmitter Sustaining Voltage POWE

 0.2. Size:101K  onsemi
mje270g.pdf

MJE270
MJE270

MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab

 0.3. Size:84K  onsemi
mje270g mje271g.pdf

MJE270
MJE270

MJE270G (NPN),MJE271G (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS These Devices are Pb-Free

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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History: MJE243G

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