Справочник транзисторов. MJE270

 

Биполярный транзистор MJE270 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJE270
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 6 MHz
   Статический коэффициент передачи тока (hfe): 2000
   Корпус транзистора: TO126

 Аналоги (замена) для MJE270

 

 

MJE270 Datasheet (PDF)

 ..1. Size:101K  onsemi
mje270 mje271.pdf

MJE270 MJE270

MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab

 ..2. Size:520K  cdil
mje270 71.pdf

MJE270 MJE270

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package MJE270, MJE271MJE270 NPN PLASTIC POWER TRANSISTORMJE271 PNP PLASTIC POWER TRANSISTORMedium Power Darlingtons for Linear and Switching ApplicationsPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BASE123ALL DIMENSIONS IN MMABSOLUTE MAXIMUM RATINGSCollect

 0.1. Size:109K  motorola
mje270re.pdf

MJE270 MJE270

Order this documentMOTOROLAby MJE270/DSEMICONDUCTOR TECHNICAL DATANPNMJE270Complementary Silicon PowerPNPMJE271Transistors. . . designed specifically for use with the MC3419 SolidState Subscriber LoopInterface Circuit (SLIC). High Safe Operating Area 2.0 AMPEREIS/B @ 40 V, 1.0 s = 0.375 A TO126 COMPLEMENTARY CollectorEmitter Sustaining Voltage POWE

 0.2. Size:101K  onsemi
mje270g.pdf

MJE270 MJE270

MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab

 0.3. Size:84K  onsemi
mje270g mje271g.pdf

MJE270 MJE270

MJE270G (NPN),MJE271G (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS These Devices are Pb-Free

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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