MJE270 datasheet, аналоги, основные параметры

Наименование производителя: MJE270

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 2 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 6 MHz

Статический коэффициент передачи тока (hFE): 2000

Корпус транзистора: TO126

 Аналоги (замена) для MJE270

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MJE270 даташит

 ..1. Size:101K  onsemi
 mje270 mje271.pdf pdf_icon

MJE270

MJE270 (NPN), MJE271 (PNP) Complementary Silicon Power Transistors Features http //onsemi.com High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARY VCEO(sus) = 100 Vdc (Min) POWER DARLINGTON High DC Current Gain TRANSISTORS hFE @ 120 mA, 10 V = 1500 (Min) 100 VOLTS, 15 WATTS Pb-Free Packages are Availab

 ..2. Size:520K  cdil
 mje270 71.pdf pdf_icon

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE270, MJE271 MJE270 NPN PLASTIC POWER TRANSISTOR MJE271 PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collect

 0.1. Size:109K  motorola
 mje270re.pdf pdf_icon

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Order this document MOTOROLA by MJE270/D SEMICONDUCTOR TECHNICAL DATA NPN MJE270 Complementary Silicon Power PNP MJE271 Transistors . . . designed specifically for use with the MC3419 Solid State Subscriber Loop Interface Circuit (SLIC). High Safe Operating Area 2.0 AMPERE IS/B @ 40 V, 1.0 s = 0.375 A TO 126 COMPLEMENTARY Collector Emitter Sustaining Voltage POWE

 0.2. Size:101K  onsemi
 mje270g.pdf pdf_icon

MJE270

MJE270 (NPN), MJE271 (PNP) Complementary Silicon Power Transistors Features http //onsemi.com High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARY VCEO(sus) = 100 Vdc (Min) POWER DARLINGTON High DC Current Gain TRANSISTORS hFE @ 120 mA, 10 V = 1500 (Min) 100 VOLTS, 15 WATTS Pb-Free Packages are Availab

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJE251, MJE252, MJE2520, MJE2521, MJE2522, MJE2523, MJE253, MJE254, 9014, MJE271, MJE2801, MJE2801K, MJE2801T, MJE29, MJE2901, MJE2901K, MJE2901T