MJE2801T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE2801T 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO220
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MJE2801T datasheet
mje2801t.pdf
isc Silicon NPN Power Transistor MJE2801T DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain- h = 25-100@I = 3A FE C Complement to Type MJE2901T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers up to 35 watts mus
Otros transistores... MJE2522, MJE2523, MJE253, MJE254, MJE270, MJE271, MJE2801, MJE2801K, A1013, MJE29, MJE2901, MJE2901K, MJE2901T, MJE2955, MJE2955K, MJE2955T, MJE29A
Parámetros del transistor bipolar y su interrelación.
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