MJE3440 Datasheet. Equivalente

 ..1. Size:67K  st
 mje3440.pdf

MJE3440 SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO 350 V Collector-Base Voltag

 8.1. Size:147K  onsemi
 mje344g.pdf

MJE344G Plastic NPN Silicon Medium-Power Transistor This device is useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. Features http //onsemi.com These Devices are Pb-Free and are RoHS Compliant* 0.5 AMPERE POWER TRANSISTORS MAXIMUM RATINGS NPN SILICON Rating Symbol Value Unit 150-200 VOLTS, 20 WATTS Collector-Emitter Volt

 8.2. Size:62K  onsemi
 mje344-d.pdf

 9.1. Size:100K  motorola
 mje3439r.pdf

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 mje340re.pdf

Order this document MOTOROLA by MJE340/D SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN 0.5 AMPERE Silicon Transistor POWER TRANSISTOR NPN SILICON . . . useful for high voltage general purpose applications. 300 VOLTS Suitable for Transformerless, Line Operated Equipment 20 WATTS Thermopad Construction Provides High Power Dissipation Rating for High Relia

 9.3. Size:130K  motorola
 mje341re.pdf

Order this document MOTOROLA by MJE341/D SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS . . . useful for medium voltage applications requiring high fT such as converters and NPN SILICON extended range amplifiers. 150 200 VOLTS

 9.4. Size:594K  st
 mje340 mje350.pdf

MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred salestypes Complementary NPN - PNP devices Applications Linear and switching industrial equipment 3 2 1 Description SOT-32 The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complemen

 9.5. Size:66K  st
 mje340-mje350.pdf

MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. S

 9.6. Size:37K  fairchild semi
 mje340.pdf

MJE340 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO

 9.7. Size:54K  onsemi
 mje3439-d.pdf

MJE3439 NPN Silicon High-Voltage Power Transistor This device is designed for use in line-operated equipment requiring high fT. Features http //onsemi.com High DC Current Gain - hFE = 40-160 @ IC = 20 mAdc 0.3 AMPERE Current Gain Bandwidth Product - fT = 15 MHz (Min) @ IC POWER TRANSISTOR = 10 mAdc NPN SILICON Low Output Capacitance - Cob = 10 pF (Max) @ f 350 VOLTS,

 9.8. Size:76K  onsemi
 mje3439g.pdf

MJE3439G NPN Silicon High-Voltage Power Transistor This device is designed for use in line-operated equipment requiring high fT. Features http //onsemi.com High DC Current Gain 0.3 AMPERE High Current-Gain - Bandwidth Product Low Output Capacitance POWER TRANSISTOR These Devices are Pb-Free and are RoHS Compliant* NPN SILICON 350 VOLTS, 15 WATTS MAXIMUM RATINGS C

 9.9. Size:67K  onsemi
 mje340-d.pdf

MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http //onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATT

 9.10. Size:67K  onsemi
 mje340g.pdf

MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http //onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATT

 9.11. Size:238K  cdil
 mje340.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340 TO126 Plastic Package E C B For use in High Voltage General Purpose Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 300 V Collector Base Voltage VCBO 300 V VEBO Emitter Base Voltage 3.0 V IC C

 9.12. Size:208K  inchange semiconductor
 mje340t.pdf

isc Silicon NPN Power Transistor MJE340T DESCRIPTION Collector Emitter Sustaining Voltage- V = 300 V(Min) CEO(SUS) DC Current Gain- h = 100(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 50mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general p

 9.13. Size:211K  inchange semiconductor
 mje341.pdf

isc Silicon NPN Power Transistor MJE341 DESCRIPTION Collector Emitter Sustaining Voltage- V = 150 V(Min) CEO(SUS) DC Current Gain- h = 20(Min) @ I = 150mA FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium voltage and extended range amplifiers applications. ABSOLUTE MAXIMUM

 9.14. Size:212K  inchange semiconductor
 mje340.pdf

isc Silicon NPN Power Transistor MJE340 DESCRIPTION Collector Emitter Sustaining Voltage- V = 300 V(Min) CEO(SUS) DC Current Gain- h = 100(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 50mA CE(sat) C Complement to the PNP MJE350 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed