MJE371K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE371K
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO220
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MJE371K Datasheet (PDF)
mje371re.pdf
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Order this documentMOTOROLAby MJE371/DSEMICONDUCTOR TECHNICAL DATAMJE371Plastic Medium-Power PNP4 AMPERESilicon TransistorsPOWER TRANSISTORPNP SILICON. . . designed for use in generalpurpose amplifier and switching circuits. Recom-40 VOLTSmended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry40 WATTScircuitry. DC Current Gain hFE
mje371 mje521.pdf
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mje371g.pdf
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MJE371GPlastic Medium-PowerPNP Silicon TransistorThis device is designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 20 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures High DC Current Gain4 AMPERES MJE371 is Complementary to NPN MJE521POWER TRANSISTOR These Devices are Pb-Free
mje371-d.pdf
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MJE371Plastic Medium-PowerPNP Silicon TransistorThis device is designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 20 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures DC Current Gain - hFE = 40 (Min) @ IC4 AMPERES= 1.0 AdcPOWER TRANSISTOR MJE371 is Complementary to NPN MJE521PNP
mje371.pdf
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isc Silicon PNP Power Transistor MJE371DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -40VDC Current Gain: h = 40(Min) @ I = -1AFE CComplement to Type MJE521Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier and switchingcircuits.Recommended for u
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