MJE4351
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE4351
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 120
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 16
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1
MHz
Capacitancia de salida (Cc): 800
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar MJE4351
MJE4351
Datasheet (PDF)
..1. Size:222K inchange semiconductor
mje4350 mje4351 mje4352 mje4353.pdf 
isc Silicon PNP Power Transistors MJE4350/4351/4352/4353DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)- MJE4350CEO(SUS)= -120V(Min)- MJE4351= -140V(Min)- MJE4352= -160V(Min)- MJE4353Low Saturation VoltageComplement to the NPN MJE4340/4341/4342/4343APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching r
8.1. Size:246K onsemi
mje4343 mje4353.pdf
MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h
8.2. Size:247K inchange semiconductor
mje4353.pdf
isc Silicon PNP Power Transistor MJE4353DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = -8 AFE C: h = 8 (Min) @I = -16AFE CComplement to Type MJE4343Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching reg
9.1. Size:197K motorola
mje4342r.pdf
Order this documentMOTOROLAby MJE4342/DSEMICONDUCTOR TECHNICAL DATANPNMJE4342High-Voltage High PowerMJE4343TransistorsPNPMJE4352. . . designed for use in high power audio amplifier applications and high voltageswitching regulator circuits. High CollectorEmitter Sustaining Voltage MJE4353NPN PNPVCEO(sus) = 140 Vdc MJE4342 MJE4352VCEO(sus) = 160 Vdc
9.2. Size:137K onsemi
mje4343g.pdf
MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h
9.3. Size:245K inchange semiconductor
mje4343.pdf
isc Silicon NPN Power Transistor MJE4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = 8 AFE C: h = 8 (Min) @I = 16AFE CComplement to Type MJE4353Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching regula
9.4. Size:220K inchange semiconductor
mje4340 mje4341 mje4342 mje4343.pdf
isc Silicon NPN Power Transistors MJE4340/4341/4342/4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- MJE4340CEO(SUS)= 120V(Min)- MJE4341= 140V(Min)- MJE4342= 160V(Min)- MJE4343Low Saturation VoltageComplement to the PNP MJE4350/4351/4352/4353APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching regul
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
