MJE4351 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE4351
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1 MHz
Capacitancia de salida (Cc): 800 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO218
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MJE4351 datasheet
mje4350 mje4351 mje4352 mje4353.pdf
isc Silicon PNP Power Transistors MJE4350/4351/4352/4353 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min)- MJE4350 CEO(SUS) = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353 Low Saturation Voltage Complement to the NPN MJE4340/4341/4342/4343 APPLICATIONS Designed for use in high power audio amplifier applications and high voltage switching r
mje4343 mje4353.pdf
MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http //onsemi.com Features 16 AMPS High Collector-Emitter Sustaining Voltage - NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc - MJE4343 MJE4353 COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h
mje4353.pdf
isc Silicon PNP Power Transistor MJE4353 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -160V(Min) CEO(SUS) DC current gain - h = 15 (Min) @I = -8 A FE C h = 8 (Min) @I = -16A FE C Complement to Type MJE4343 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For use in high power audio amplifier and switching reg
Otros transistores... MJE42A, MJE42B, MJE42C, MJE4340, MJE4341, MJE4342, MJE4343, MJE4350, S8550, MJE4352, MJE4353, MJE47, MJE48, MJE488, MJE49, MJE4918, MJE4919
History: 2SB834O
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