Справочник транзисторов. MJE4351

 

Биполярный транзистор MJE4351 Даташит. Аналоги


   Наименование производителя: MJE4351
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 125 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 16 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Ёмкость коллекторного перехода (Cc): 800 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO218
 

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MJE4351 Datasheet (PDF)

 ..1. Size:222K  inchange semiconductor
mje4350 mje4351 mje4352 mje4353.pdfpdf_icon

MJE4351

isc Silicon PNP Power Transistors MJE4350/4351/4352/4353DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)- MJE4350CEO(SUS)= -120V(Min)- MJE4351= -140V(Min)- MJE4352= -160V(Min)- MJE4353Low Saturation VoltageComplement to the NPN MJE4340/4341/4342/4343APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching r

 8.1. Size:246K  onsemi
mje4343 mje4353.pdfpdf_icon

MJE4351

MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 8.2. Size:247K  inchange semiconductor
mje4353.pdfpdf_icon

MJE4351

isc Silicon PNP Power Transistor MJE4353DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = -8 AFE C: h = 8 (Min) @I = -16AFE CComplement to Type MJE4343Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching reg

 9.1. Size:197K  motorola
mje4342r.pdfpdf_icon

MJE4351

Order this documentMOTOROLAby MJE4342/DSEMICONDUCTOR TECHNICAL DATANPNMJE4342High-Voltage High PowerMJE4343TransistorsPNPMJE4352. . . designed for use in high power audio amplifier applications and high voltageswitching regulator circuits. High CollectorEmitter Sustaining Voltage MJE4353NPN PNPVCEO(sus) = 140 Vdc MJE4342 MJE4352VCEO(sus) = 160 Vdc

Другие транзисторы... MJE42A , MJE42B , MJE42C , MJE4340 , MJE4341 , MJE4342 , MJE4343 , MJE4350 , A940 , MJE4352 , MJE4353 , MJE47 , MJE48 , MJE488 , MJE49 , MJE4918 , MJE4919 .

 

 
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