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MJE4353 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE4353
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Capacitancia de salida (Cc): 800 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO218
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MJE4353 Datasheet (PDF)

 ..1. Size:246K  onsemi
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MJE4353

MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 ..2. Size:222K  inchange semiconductor
mje4350 mje4351 mje4352 mje4353.pdf pdf_icon

MJE4353

isc Silicon PNP Power Transistors MJE4350/4351/4352/4353DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)- MJE4350CEO(SUS)= -120V(Min)- MJE4351= -140V(Min)- MJE4352= -160V(Min)- MJE4353Low Saturation VoltageComplement to the NPN MJE4340/4341/4342/4343APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching r

 ..3. Size:247K  inchange semiconductor
mje4353.pdf pdf_icon

MJE4353

isc Silicon PNP Power Transistor MJE4353DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = -8 AFE C: h = 8 (Min) @I = -16AFE CComplement to Type MJE4343Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching reg

 9.1. Size:197K  motorola
mje4342r.pdf pdf_icon

MJE4353

Order this documentMOTOROLAby MJE4342/DSEMICONDUCTOR TECHNICAL DATANPNMJE4342High-Voltage High PowerMJE4343TransistorsPNPMJE4352. . . designed for use in high power audio amplifier applications and high voltageswitching regulator circuits. High CollectorEmitter Sustaining Voltage MJE4353NPN PNPVCEO(sus) = 140 Vdc MJE4342 MJE4352VCEO(sus) = 160 Vdc

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 3DD13009_C8 | CX954E | MMBR4957LT3

 

 
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