MJE51 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE51
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 350 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2.5 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar MJE51
MJE51 Datasheet (PDF)
mje51t.pdf
isc Silicon NPN Power Transistor MJE51TDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage inverters, switching regulatorsand line operated amplifier applications. Especially wellsuited for switching power supply applicationsABSOLU
mje5180 mje5181 mje5182.pdf
isc Silicon NPN Power Transistors MJE5180/5181/5182DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)- MJE5180CEO(SUS)= 140V(Min)- MJE5181= 160V(Min)- MJE5182Low Saturation VoltageComplement to Type MJE5170/5171/5172Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose ampli
mje5170 mje5171 mje5172.pdf
isc Silicon PNP Power Transistors MJE5170/5171/5172DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)- MJE5170CEO(SUS)= -140V(Min)- MJE5171= -160V(Min)- MJE5172Low Saturation VoltageComplement to the NPN MJE5180/5181/5182Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
