MJE51 Specs and Replacement
Type Designator: MJE51
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO220
MJE51 Substitution
- BJT ⓘ Cross-Reference Search
MJE51 datasheet
isc Silicon NPN Power Transistor MJE51T DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLU... See More ⇒
isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min)- MJE5180 CEO(SUS) = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 Low Saturation Voltage Complement to Type MJE5170/5171/5172 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ampli... See More ⇒
isc Silicon PNP Power Transistors MJE5170/5171/5172 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min)- MJE5170 CEO(SUS) = -140V(Min)- MJE5171 = -160V(Min)- MJE5172 Low Saturation Voltage Complement to the NPN MJE5180/5181/5182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose... See More ⇒
Detailed specifications: MJE488, MJE49, MJE4918, MJE4919, MJE4920, MJE4921, MJE4922, MJE4923, TIP31, MJE5170, MJE5171, MJE5172, MJE5180, MJE5181, MJE5182, MJE5190, MJE5190J
Keywords - MJE51 pdf specs
MJE51 cross reference
MJE51 equivalent finder
MJE51 pdf lookup
MJE51 substitution
MJE51 replacement
