MJE51T Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE51T

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-emisor (Vce): 300 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2.5 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO220

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MJE51T datasheet

 ..1. Size:201K  inchange semiconductor
 mje51t.pdf pdf_icon

MJE51T

isc Silicon NPN Power Transistor MJE51T DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLU

 9.1. Size:200K  inchange semiconductor
 mje5180 mje5181 mje5182.pdf pdf_icon

MJE51T

isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min)- MJE5180 CEO(SUS) = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 Low Saturation Voltage Complement to Type MJE5170/5171/5172 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ampli

 9.2. Size:217K  inchange semiconductor
 mje5170 mje5171 mje5172.pdf pdf_icon

MJE51T

isc Silicon PNP Power Transistors MJE5170/5171/5172 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min)- MJE5170 CEO(SUS) = -140V(Min)- MJE5171 = -160V(Min)- MJE5172 Low Saturation Voltage Complement to the NPN MJE5180/5181/5182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose

Otros transistores... MJE5190J, MJE5191, MJE5191J, MJE5192, MJE5192J, MJE5193, MJE5194, MJE5195, 13005, MJE52, MJE520, MJE520K, MJE521, MJE521K, MJE52T, MJE53, MJE53T