MJE51T Specs and Replacement

Type Designator: MJE51T

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

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MJE51T datasheet

 ..1. Size:201K  inchange semiconductor

 mje51t.pdf pdf_icon

MJE51T

isc Silicon NPN Power Transistor MJE51T DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLU... See More ⇒

 9.1. Size:200K  inchange semiconductor

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MJE51T

isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min)- MJE5180 CEO(SUS) = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 Low Saturation Voltage Complement to Type MJE5170/5171/5172 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ampli... See More ⇒

 9.2. Size:217K  inchange semiconductor

 mje5170 mje5171 mje5172.pdf pdf_icon

MJE51T

isc Silicon PNP Power Transistors MJE5170/5171/5172 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min)- MJE5170 CEO(SUS) = -140V(Min)- MJE5171 = -160V(Min)- MJE5172 Low Saturation Voltage Complement to the NPN MJE5180/5181/5182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose... See More ⇒

Detailed specifications: MJE5190J, MJE5191, MJE5191J, MJE5192, MJE5192J, MJE5193, MJE5194, MJE5195, 13005, MJE52, MJE520, MJE520K, MJE521, MJE521K, MJE52T, MJE53, MJE53T

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