MJE52
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE52
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 300
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2.5
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar MJE52
MJE52
Datasheet (PDF)
0.1. Size:128K motorola
mje521 mje521re.pdf
Order this documentMOTOROLAby MJE521/DSEMICONDUCTOR TECHNICAL DATAMJE521Plastic Medium-Power NPN4 AMPERESilicon TransistorPOWER TRANSISTORNPN SILICON. . . designed for use in generalpurpose amplifier and switching circuits. Recom-40 VOLTSmended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry40 WATTScircuitry. DC Current Gain hFE
0.2. Size:44K st
mje521.pdf
MJE521SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPEDESCRIPTION The MJE521 is a silicon Epitaxial-Base NPNtransistor in Jedec SOT-32 plastic package.It is intended for use in 5 to 20W audio amplifiers,general purpose amplifier and switching circuits.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collec
0.3. Size:65K central
mje371 mje521.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
0.4. Size:62K onsemi
mje521-d.pdf
MJE521Plastic Medium-PowerNPN Silicon TransistorThese devices are designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 10 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures DC Current Gain - hFE = 40 (Min) @ IC4 AMPERES= 1.0 AdcPOWER TRANSISTORS Complementary to PNP MJE371NPN SILIC
0.5. Size:214K inchange semiconductor
mje520.pdf
isc Silicon NPN Power Transistor MJE520DESCRIPTIONHigh Collector Current-I = 3.0ACHigh Collector-Emitter Breakdown Voltage-: V = 30V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)
0.6. Size:211K inchange semiconductor
mje521.pdf
isc Silicon NPN Power Transistor MJE521DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 40 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 1AFE CComplement to Type MJE371Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching circuits applications.ABSOLU
0.7. Size:209K inchange semiconductor
mje52t.pdf
isc Silicon NPN Power Transistor MJE52TDESCRIPTIONCollector-Emitter Sustaining Voltage: V = 300V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage inverters, switching regulatorsand line operated amplifier applications. Especially wellsuited for switching power supply applicationsABSOLUT
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