MJE520 Todos los transistores

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 mje520.pdf

isc Silicon NPN Power Transistor MJE520 DESCRIPTION High Collector Current-I = 3.0A C High Collector-Emitter Breakdown Voltage- V = 30V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.1. Size:128K  motorola
 mje521 mje521re.pdf

Order this document MOTOROLA by MJE521/D SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN 4 AMPERE Silicon Transistor POWER TRANSISTOR NPN SILICON . . . designed for use in general purpose amplifier and switching circuits. Recom- 40 VOLTS mended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry 40 WATTS circuitry. DC Current Gain hFE

 9.2. Size:44K  st
 mje521.pdf

MJE521 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN transistor in Jedec SOT-32 plastic package. It is intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collec

 9.3. Size:65K  central
 mje371 mje521.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.4. Size:62K  onsemi
 mje521-d.pdf

MJE521 Plastic Medium-Power NPN Silicon Transistor These devices are designed for use in general-purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. http //onsemi.com Features DC Current Gain - hFE = 40 (Min) @ IC 4 AMPERES = 1.0 Adc POWER TRANSISTORS Complementary to PNP MJE371 NPN SILIC

 9.5. Size:211K  inchange semiconductor
 mje521.pdf

isc Silicon NPN Power Transistor MJE521 DESCRIPTION Collector Emitter Sustaining Voltage- V = 40 V(Min) CEO(SUS) DC Current Gain- h = 40(Min) @ I = 1A FE C Complement to Type MJE371 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching circuits applications. ABSOLU

 9.6. Size:209K  inchange semiconductor
 mje52t.pdf

isc Silicon NPN Power Transistor MJE52T DESCRIPTION Collector-Emitter Sustaining Voltage V = 300V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLUT