MJE520 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE520
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO126
MJE520 Transistor Equivalent Substitute - Cross-Reference Search
MJE520 Datasheet (PDF)
mje520.pdf
isc Silicon NPN Power Transistor MJE520DESCRIPTIONHigh Collector Current-I = 3.0ACHigh Collector-Emitter Breakdown Voltage-: V = 30V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)
mje521 mje521re.pdf
Order this documentMOTOROLAby MJE521/DSEMICONDUCTOR TECHNICAL DATAMJE521Plastic Medium-Power NPN4 AMPERESilicon TransistorPOWER TRANSISTORNPN SILICON. . . designed for use in generalpurpose amplifier and switching circuits. Recom-40 VOLTSmended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry40 WATTScircuitry. DC Current Gain hFE
mje521.pdf
MJE521SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPEDESCRIPTION The MJE521 is a silicon Epitaxial-Base NPNtransistor in Jedec SOT-32 plastic package.It is intended for use in 5 to 20W audio amplifiers,general purpose amplifier and switching circuits.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collec
mje371 mje521.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
mje521-d.pdf
MJE521Plastic Medium-PowerNPN Silicon TransistorThese devices are designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 10 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures DC Current Gain - hFE = 40 (Min) @ IC4 AMPERES= 1.0 AdcPOWER TRANSISTORS Complementary to PNP MJE371NPN SILIC
mje521.pdf
isc Silicon NPN Power Transistor MJE521DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 40 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 1AFE CComplement to Type MJE371Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching circuits applications.ABSOLU
mje52t.pdf
isc Silicon NPN Power Transistor MJE52TDESCRIPTIONCollector-Emitter Sustaining Voltage: V = 300V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage inverters, switching regulatorsand line operated amplifier applications. Especially wellsuited for switching power supply applicationsABSOLUT
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
