MJE5741 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE5741
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 350 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO220
Búsqueda de reemplazo de MJE5741
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MJE5741 datasheet
8.2. Size:129K onsemi
mje5742g.pdf 
MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high-voltage power switching in inductive circuits. Features http //onsemi.com These Devices are Pb-Free and are RoHS Compliant* POWER DARLINGTON Applications TRANSISTORS Small Engine Ignition 8 AMPERES Switching Regulators 300-400 VOLTS Inv
9.2. Size:162K onsemi
mje5730g.pdf
MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T
9.3. Size:238K onsemi
mje5730 mje5731 mje5731a.pdf
MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switch-mode power supply drivers and other switching applications. www.onsemi.com Features 1.0 AMPERE Popular TO-220 Plastic Package POWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 Series PCP SILICON These Devices ar
9.4. Size:162K onsemi
mje5731g.pdf
MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T
9.5. Size:162K onsemi
mje5731ag.pdf
MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T
9.6. Size:218K inchange semiconductor
mje5731.pdf
isc Silicon PNP Power Transistor MJE5731 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -350V(Min) CEO(SUS) DC current gain - h = 30 150@ I = -0.3A FE C With TO-220 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other sw
9.7. Size:218K inchange semiconductor
mje5731a.pdf
isc Silicon PNP Power Transistor MJE5731A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -400V(Min) CEO(SUS) DC current gain - h = 30 150@ I = -0.3A FE C With TO-220 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other s
9.8. Size:218K inchange semiconductor
mje5730.pdf
isc Silicon PNP Power Transistor MJE5730 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -300V(Min) CEO(SUS) DC current gain - h = 30 150@ I = -0.3A FE C With TO-220 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other sw
Otros transistores... MJE5655, MJE5656, MJE5657, MJE5730, MJE5731, MJE5731A, MJE5732, MJE5740, 2N2907, MJE5742, MJE5850, MJE5851, MJE5852, MJE5974, MJE5975, MJE5976, MJE5977
