MJE5741 PDF Specs and Replacement
Type Designator: MJE5741
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80
W
Maximum Collector-Base Voltage |Vcb|: 700
V
Maximum Collector-Emitter Voltage |Vce|: 350
V
Maximum Emitter-Base Voltage |Veb|: 8
V
Maximum Collector Current |Ic max|: 8
A
Max. Operating Junction Temperature (Tj): 150
°C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO220
-
BJT ⓘ Cross-Reference Search
MJE5741 PDF detailed specifications
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mje5742g.pdf 

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mje5730 mje5731 mje5731a.pdf 

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switch-mode power supply drivers and other switching applications. www.onsemi.com Features 1.0 AMPERE Popular TO-220 Plastic Package POWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 Series PCP SILICON These Devices ar... See More ⇒
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MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T... See More ⇒
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mje5731ag.pdf 

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T... See More ⇒
9.6. Size:218K inchange semiconductor
mje5731.pdf 

isc Silicon PNP Power Transistor MJE5731 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -350V(Min) CEO(SUS) DC current gain - h = 30 150@ I = -0.3A FE C With TO-220 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other sw... See More ⇒
9.7. Size:218K inchange semiconductor
mje5731a.pdf 

isc Silicon PNP Power Transistor MJE5731A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -400V(Min) CEO(SUS) DC current gain - h = 30 150@ I = -0.3A FE C With TO-220 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other s... See More ⇒
9.8. Size:218K inchange semiconductor
mje5730.pdf 

isc Silicon PNP Power Transistor MJE5730 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -300V(Min) CEO(SUS) DC current gain - h = 30 150@ I = -0.3A FE C With TO-220 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other sw... See More ⇒
Detailed specifications: MJE5655
, MJE5656
, MJE5657
, MJE5730
, MJE5731
, MJE5731A
, MJE5732
, MJE5740
, 2N2907
, MJE5742
, MJE5850
, MJE5851
, MJE5852
, MJE5974
, MJE5975
, MJE5976
, MJE5977
.
History: 2SC839
| 2SA673AKC
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