MJE700T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE700T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar MJE700T
MJE700T Datasheet (PDF)
mje700t.pdf
isc Silicon PNP Darlington Power Transistor MJE700TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60 V(BR)CEODC Current Gain: h = 750(Min) @ I = -1.5 AFE C= 100(Min) @ I = -4ACComplement to Type MJE800TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-spe
mje700re.pdf
Order this documentMOTOROLAby MJE700/DSEMICONDUCTOR TECHNICAL DATAPNPMJE700,TPlastic DarlingtonComplementary Silicon PowerMJE702TransistorsMJE703. . . designed for generalpurpose amplifier and lowspeed switching applications.NPN High DC Current Gain MJE800,ThFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Builtin BaseEmitter Resis
mje700.pdf
MJE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSym- UnitParameter Valuebol s VCB
mje700g.pdf
MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit
mje700.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700 DESCRIPTION CollectorEmitter Breakdown Voltage : V(BR)CEO =-60 V DC Current Gain : hFE = 750(Min) @ IC=-1.5 A Complement to Type MJE800 APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
