MJE700T Specs and Replacement

Type Designator: MJE700T

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220

 MJE700T Substitution

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MJE700T datasheet

 ..1. Size:215K  inchange semiconductor

 mje700t.pdf pdf_icon

MJE700T

isc Silicon PNP Darlington Power Transistor MJE700T DESCRIPTION Collector Emitter Breakdown Voltage V = -60 V (BR)CEO DC Current Gain h = 750(Min) @ I = -1.5 A FE C = 100(Min) @ I = -4A C Complement to Type MJE800T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-spe... See More ⇒

 8.1. Size:256K  motorola

 mje700re.pdf pdf_icon

MJE700T

Order this document MOTOROLA by MJE700/D SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors MJE703 . . . designed for general purpose amplifier and low speed switching applications. NPN High DC Current Gain MJE800,T hFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Built in Base Emitter Resis... See More ⇒

 8.2. Size:51K  fairchild semi

 mje700.pdf pdf_icon

MJE700T

MJE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Sym- Unit Parameter Value bol s VCB... See More ⇒

 8.3. Size:126K  onsemi

 mje700g.pdf pdf_icon

MJE700T

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit... See More ⇒

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Detailed specifications: MJE5985, MJE6040, MJE6041, MJE6042, MJE6043, MJE6044, MJE6045, MJE700, C1815, MJE701, MJE701T, MJE702, MJE702T, MJE703, MJE703T, MJE710, MJE711

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