MJF13007 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJF13007
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Capacitancia de salida (Cc): 110 pF
Ganancia de corriente contínua (hFE): 8
Encapsulados: TO220F
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MJF13007 datasheet
mjf13007.pdf
isc Silicon NPN Power Transistor MJF13007 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 2.0(Max) @ I = 5.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are pa
mjf13005.pdf
isc Silicon NPN Power Transistor MJF13005 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 0.6(Max.) @ I = 2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p
mjf13009.pdf
isc Silicon NPN Power Transistor MJF13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p
Otros transistores... MJE8500, MJE8501, MJE8502, MJE8503, MJE9780, MJF10012, MJF122, MJF127, S8550, MJF15030, MJF15031, MJF16002, MJF16006A, MJF16010A, MJF16204, MJF16206, MJF16210
History: MJE8501 | MMUN2241L | MJF127
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