MJF15030
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJF15030
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 36
W
Tensión colector-base (Vcb): 150
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de transistor bipolar MJF15030
MJF15030
Datasheet (PDF)
..1. Size:246K motorola
mjf15030 mjf15031.pdf
Order this documentMOTOROLAby MJF15030/DSEMICONDUCTOR TECHNICAL DATANPNMJF15030Complementary PowerPNPMJF15031TransistorsFor Isolated Package ApplicationsDesigned for generalpurpose amplifier and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICONor chassis.POWER TRANSISTO
..2. Size:128K onsemi
mjf15030 mjf15031.pdf
MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE
..3. Size:208K inchange semiconductor
mjf15030.pdf
isc Silicon NPN Power Transistor MJF15030DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS) High DC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJF15031Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and swi
0.1. Size:134K onsemi
mjf15030g.pdf
MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE
7.1. Size:134K onsemi
mjf15031g.pdf
MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE
7.2. Size:209K inchange semiconductor
mjf15031.pdf
isc Silicon PNP Power Transistor MJF15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High DC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJF15030Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and swit
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