MJF15030 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJF15030
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220F
MJF15030 Transistor Equivalent Substitute - Cross-Reference Search
MJF15030 Datasheet (PDF)
mjf15030 mjf15031.pdf
Order this documentMOTOROLAby MJF15030/DSEMICONDUCTOR TECHNICAL DATANPNMJF15030Complementary PowerPNPMJF15031TransistorsFor Isolated Package ApplicationsDesigned for generalpurpose amplifier and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICONor chassis.POWER TRANSISTO
mjf15030 mjf15031.pdf
MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE
mjf15030.pdf
isc Silicon NPN Power Transistor MJF15030DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS) High DC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJF15031Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and swi
mjf15030g.pdf
MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE
mjf15031g.pdf
MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE
mjf15031.pdf
isc Silicon PNP Power Transistor MJF15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High DC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJF15030Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and swit
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
