MJF18002 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJF18002
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 1000 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 6.5 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hfe): 14
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar MJF18002
MJF18002 Datasheet (PDF)
mjf18002.pdf
isc Silicon NPN Power Transistor MJF18002DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aUNITSYMBOL P
mjf18008g.pdf
MJE18008G, MJF18008GSWITCHMODENPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008G have an applications specific state-of-the-artdie designed for use in 220 V line-operated SWITCHMODE Powerhttp://onsemi.comsupplies and electronic light ballasts.Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES
mje18004 mjf18004.pdf
MJE18004, MJF18004Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES Hi
mjf18004g.pdf
MJE18004G, MJF18004GSWITCHMODENPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004G have an applications specific state-of-the-artdie designed for use in 220 V line-operated SWITCHMODE Powerhttp://onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES
mje18008 mjf18008.pdf
MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi
mjf18006.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJF18006 DESCRIPTION With TO-220F package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI
mjf18004.pdf
isc Silicon NPN Power Transistor MJF18004DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
mjf18006.pdf
isc Silicon NPN Power Transistor MJF18006DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
mjf18008.pdf
isc Silicon NPN Power Transistor MJF18008DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aUNITSYMBOL P
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: NB013FZ | KTD1854T
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050