All Transistors. MJF18002 Datasheet

 

MJF18002 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJF18002
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 6.5 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 14
   Noise Figure, dB: -
   Package: TO220F

 MJF18002 Transistor Equivalent Substitute - Cross-Reference Search

   

MJF18002 Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
mjf18002.pdf

MJF18002
MJF18002

isc Silicon NPN Power Transistor MJF18002DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aUNITSYMBOL P

 7.1. Size:257K  onsemi
mjf18008g.pdf

MJF18002
MJF18002

MJE18008G, MJF18008GSWITCHMODENPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008G have an applications specific state-of-the-artdie designed for use in 220 V line-operated SWITCHMODE Powerhttp://onsemi.comsupplies and electronic light ballasts.Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES

 7.2. Size:340K  onsemi
mje18004 mjf18004.pdf

MJF18002
MJF18002

MJE18004, MJF18004Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES Hi

 7.3. Size:247K  onsemi
mjf18004g.pdf

MJF18002
MJF18002

MJE18004G, MJF18004GSWITCHMODENPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004G have an applications specific state-of-the-artdie designed for use in 220 V line-operated SWITCHMODE Powerhttp://onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES

 7.4. Size:139K  onsemi
mje18008 mjf18008.pdf

MJF18002
MJF18002

MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi

 7.5. Size:85K  jmnic
mjf18006.pdf

MJF18002
MJF18002

Product Specification www.jmnic.com Silicon NPN Power Transistors MJF18006 DESCRIPTION With TO-220F package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI

 7.6. Size:215K  inchange semiconductor
mjf18004.pdf

MJF18002
MJF18002

isc Silicon NPN Power Transistor MJF18004DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 7.7. Size:215K  inchange semiconductor
mjf18006.pdf

MJF18002
MJF18002

isc Silicon NPN Power Transistor MJF18006DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 7.8. Size:214K  inchange semiconductor
mjf18008.pdf

MJF18002
MJF18002

isc Silicon NPN Power Transistor MJF18008DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aUNITSYMBOL P

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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