MJH11022 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJH11022
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Capacitancia de salida (Cc): 400 pF
Ganancia de corriente contínua (hFE): 400
Encapsulados: TO218
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MJH11022 datasheet
mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf
Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Vo
mjh11022.pdf
isc Silicon NPN Darlington Power Transistor MJH11022 DESCRIPTION Collector-Emitter Sustaining Voltage V = 250V (Min.) CEO(SUS) High DC Current Gain h = 400(Min.)@I = 10A FE C Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5.0A CE (sat) C Complement to Type MJH11021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
mjh11022g.pdf
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (
mjh11020g.pdf
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (
Otros transistores... MJF6388, MJF6688, MJH10012, MJH11017, MJH11018, MJH11019, MJH11020, MJH11021, S9013, MJH12004, MJH13090, MJH13091, MJH16002, MJH16002A, MJH16004, MJH16006, MJH16006A
History: DTA115TET1G
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