MJH11022 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJH11022
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 400 pF
   Ganancia de corriente contínua (hfe): 400
   Paquete / Cubierta: TO218

Búsqueda de reemplazo de transistor bipolar MJH11022

MJH11022 Datasheet (PDF)

..1. Size:212K motorola
mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf

Order this documentMOTOROLAby MJH11017/DSEMICONDUCTOR TECHNICAL DATAMJH10012(See MJ10012)Complementary DarlingtonPNPSilicon Power Transistors*MJH11017. . . designed for use as general purpose amplifiers, low frequency switching andmotor control applications.MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) CollectorEmitter Sustaining Vo

..2. Size:269K inchange semiconductor
mjh11022.pdf

isc Silicon NPN Darlington Power Transistor MJH11022DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 250V (Min.)CEO(SUS)High DC Current Gain: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 5.0ACE (sat) CComplement to Type MJH11021Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

0.1. Size:141K onsemi
mjh11022g.pdf

MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

7.1. Size:141K onsemi
mjh11020g.pdf