MJH11022 Datasheet, Equivalent, Cross Reference Search

   Type Designator: MJH11022
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO218

MJH11022 Transistor Equivalent Substitute - Cross-Reference Search

MJH11022 Datasheet (PDF)

..1. Size:212K motorola
mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf

Order this documentMOTOROLAby MJH11017/DSEMICONDUCTOR TECHNICAL DATAMJH10012(See MJ10012)Complementary DarlingtonPNPSilicon Power Transistors*MJH11017. . . designed for use as general purpose amplifiers, low frequency switching andmotor control applications.MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) CollectorEmitter Sustaining Vo

..2. Size:269K inchange semiconductor
mjh11022.pdf

isc Silicon NPN Darlington Power Transistor MJH11022DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 250V (Min.)CEO(SUS)High DC Current Gain: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 5.0ACE (sat) CComplement to Type MJH11021Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

0.1. Size:141K onsemi
mjh11022g.pdf

MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

7.1. Size:141K onsemi
mjh11020g.pdf