MJH16008 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJH16008
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 850 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 350 pF
Ganancia de corriente contínua (hfe): 7
Paquete / Cubierta: TOP3
Búsqueda de reemplazo de transistor bipolar MJH16008
MJH16008 Datasheet (PDF)
mjh16008.pdf
isc Silicon NPN Power Transistor MJH16008DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for li
mjh16006.pdf
Order this documentMOTOROLAby MJH16006A/DSEMICONDUCTOR TECHNICAL DATAMJH16006ADesigner's Data SheetNPN Silicon Power TransistorPOWER TRANSISTORS1 kV SWITCHMODE Series8 AMPERES500 VOLTSThese transistors are designed for highvoltage, highspeed, power switching in150 WATTSinductive circuits where fall time is critical. They are particularly suited forlineope
mjh16006.pdf
isc Silicon NPN Power Transistor MJH16006DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for li
mjh16018.pdf
isc Silicon NPN Power Transistor MJH16018DESCRIPTIONCollector-Emitter Voltage-: V = 800V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed , power switching ininductive circuits where fall time is critical. They are particu-larly suited for line operated swi
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
