MJH16008 - описание и поиск аналогов

isc Silicon NPN Power Transistor MJH16008 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for li

Order this document MOTOROLA by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA MJH16006A Designer's Data Sheet NPN Silicon Power Transistor POWER TRANSISTORS 1 kV SWITCHMODE Series 8 AMPERES 500 VOLTS These transistors are designed for high voltage, high speed, power switching in 150 WATTS inductive circuits where fall time is critical. They are particularly suited for line ope

isc Silicon NPN Power Transistor MJH16006 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for li

isc Silicon NPN Power Transistor MJH16018 DESCRIPTION Collector-Emitter Voltage- V = 800V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed , power switching in inductive circuits where fall time is critical. They are particu- larly suited for line operated swi