MJW16018 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJW16018

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 450 pF

Ganancia de corriente contínua (hFE): 4

Encapsulados: TO247

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MJW16018 datasheet

 ..1. Size:220K  inchange semiconductor
 mjw16018.pdf pdf_icon

MJW16018

isc Silicon NPN Power Transistor MJW16018 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for lin

 7.1. Size:362K  motorola
 mjw16010.pdf pdf_icon

MJW16018

Order this document MOTOROLA by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA MJW16010A * Designer's Data Sheet *Motorola Preferred Device NPN Silicon Power Transistors POWER TRANSISTORS 1 kV SWITCHMODE Series 15 AMPERES 500 VOLTS These transistors are designed for high voltage, high speed, power switching in 125 AND 175 WATTS inductive circuits where fall time is critical. The

 7.2. Size:220K  inchange semiconductor
 mjw16010.pdf pdf_icon

MJW16018

isc Silicon NPN Power Transistor MJW16010 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critica

 7.3. Size:219K  inchange semiconductor
 mjw16010a.pdf pdf_icon

MJW16018

isc Silicon NPN Power Transistor MJW16010A DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critic

MOSTRAR MÁS

Otros transistores... MJH6283, MJH6284, MJH6285, MJH6286, MJH6287, MJW16010, MJW16010A, MJW16012, TIP142, MJW16110, MJW16206, MJW16210, MJW16212, MM1008, MM1139, MM1151, MM1152