MMBR536 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBR536
Código: 7R
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 10 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5500 MHz
Capacitancia de salida (Cc): 1.2 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO236
Búsqueda de reemplazo de transistor bipolar MMBR536
MMBR536 Datasheet (PDF)
mmbr5179.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5179LT1/DThe RF LineNPN SiliconMMBR5179LT1High-Frequency TransistorDesigned for smallsignal amplification at frequencies to 500 MHz.Specifically packaged for use in thick and thinfilm circuits using surface mountcomponents. High Gain Gpe = 15 dB Typ @ f = 200 MHz Low Noise NF = 4.5 dB Typ @
mmbr571lt1 mps571 mrf571 mrf5711lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR571LT1/DThe RF LineMMBR571LT1NPN SiliconMPS571 MRF571High-Frequency TransistorsMRF5711LT1Designed for low noise, wide dynamic range frontend amplifiers andlownoise VCOs. Available in a surfacemountable plastic package, as well asthe popular TO226AA (TO92) package. This Motorola series of smal
mmbr521lt1 mrf5211lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF LinePNP SiliconMMBR521LT1High-Frequency TransistorMRF5211LT1Designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High Current GainBandwidth Product IC = 70 mAfT
mmbr5031.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5031LT1/DThe RF LineNPN SiliconMMBR5031LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 17 dB Typ @ f = 450 MHz Low Noise NF = 2.5 dB Typ @ f
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050