All Transistors. MMBR536 Datasheet

 

MMBR536 Datasheet and Replacement


   Type Designator: MMBR536
   SMD Transistor Code: 7R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5500 MHz
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO236
 

 MMBR536 Substitution

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MMBR536 Datasheet (PDF)

 9.1. Size:55K  motorola
 mmbr5179.pdf pdf_icon

MMBR536

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5179LT1/DThe RF LineNPN SiliconMMBR5179LT1High-Frequency TransistorDesigned for smallsignal amplification at frequencies to 500 MHz.Specifically packaged for use in thick and thinfilm circuits using surface mountcomponents. High Gain Gpe = 15 dB Typ @ f = 200 MHz Low Noise NF = 4.5 dB Typ @

 9.2. Size:358K  motorola
 mmbr571lt1 mps571 mrf571 mrf5711lt1.pdf pdf_icon

MMBR536

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR571LT1/DThe RF LineMMBR571LT1NPN SiliconMPS571 MRF571High-Frequency TransistorsMRF5711LT1Designed for low noise, wide dynamic range frontend amplifiers andlownoise VCOs. Available in a surfacemountable plastic package, as well asthe popular TO226AA (TO92) package. This Motorola series of smal

 9.3. Size:151K  motorola
 mmbr521lt1 mrf5211lt1.pdf pdf_icon

MMBR536

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF LinePNP SiliconMMBR521LT1High-Frequency TransistorMRF5211LT1Designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High Current GainBandwidth Product IC = 70 mAfT

 9.4. Size:54K  motorola
 mmbr5031.pdf pdf_icon

MMBR536

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5031LT1/DThe RF LineNPN SiliconMMBR5031LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 17 dB Typ @ f = 450 MHz Low Noise NF = 2.5 dB Typ @ f

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Datasheet: MMBR4957 , MMBR4957LT1 , MMBR4957LT3 , MMBR5031 , MMBR5031LT1 , MMBR5179 , MMBR5179LT1 , MMBR521LT1 , TIP3055 , MMBR571LT1 , MMBR901 , MMBR901LT1 , MMBR901LT3 , MMBR911LT1 , MMBR920 , MMBR920LT1 , MMBR920LT3 .

History: NSBA123EF3 | 2SD5011 | FHT9015O-ME | 2SC4523 | BSJ62 | AFY75 | MMBR901LT1

Keywords - MMBR536 transistor datasheet

 MMBR536 cross reference
 MMBR536 equivalent finder
 MMBR536 lookup
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