MMBR911LT1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:158K motorola
mps911 mmbr911lt1.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR911LT1/D The RF Line MMBR911LT1 NPN Silicon MPS911 High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers and low noise VCO s. Available in a surface mountable plastic package, as well as IC = 60 mA the popular TO 226AA (TO 92) package. This Motorola series of small sig

6.1. Size:77K njs
mmbr911l.pdf pdf_icon

7.1. Size:688K blue-rocket-elect
mmbr911.pdf pdf_icon

MMBR911(BR3DG911M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low noise, high gain. / Applications High frequency amplifier applications. / Equivalent Circuit /

9.1. Size:267K motorola
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high gain, low noise small signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC

9.2. Size:330K motorola
mmbr951 mrf951 mrf957 mrf9511.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR951ALT1/D The RF Line MMBR951 NPN Silicon MRF951 Low Noise, High-Frequency MRF957 Transistors MRF9511 Designed for use in high gain, low noise small signal amplifiers. This series SERIES features excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure

9.3. Size:53K motorola
mmbr931l.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR931LT1/D The RF Line NPN Silicon MMBR931LT1 High-Frequency Transistor Designed primarily for use in low power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where power consumption is critical. Available in tape and reel packaging options T1 suffix = 3,000 units per reel RF AMPLIFIER

9.4. Size:54K motorola
mmbr920l.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR920LT1/D The RF Line NPN Silicon MMBR920LT1, T3 High-Frequency Transistor . . . designed for thick and thin film circuits using surface mount components and requiring low noise, high gain signal amplification at frequencies to 1.0 GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB

9.5. Size:54K motorola
mmbr920 .pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR920LT1/D The RF Line NPN Silicon MMBR920LT1 High-Frequency Transistor Designed for thick and thin film circuits using surface mount components and requiring low noise, high gain signal amplification at frequencies to 1.0 GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB Typ @ f =

9.6. Size:386K motorola
mrf941 mmbr941lt1 mrf9411lt1 mrf947.pdf pdf_icon