MMBR911LT1 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор MMBR911LT1 - описание производителя. Основные параметры. Даташиты.

   Наименование производителя: MMBR911LT1
   Маркировка: 7P
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.625 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
   Макcимальный постоянный ток коллектора (Ic): 0.06 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 7000 MHz
   Ёмкость коллекторного перехода (Cc): 1 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: SOT23

Аналоги (замена) для MMBR911LT1

MMBR911LT1 Datasheet (PDF)

..1. Size:158K motorola
mps911 mmbr911lt1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR911LT1/DThe RF LineMMBR911LT1NPN SiliconMPS911High-Frequency TransistorsDesigned for low noise, wide dynamic range frontend amplifiers andlownoise VCOs. Available in a surfacemountable plastic package, as well asIC = 60 mAthe popular TO226AA (TO92) package. This Motorola series of smallsig

6.1. Size:77K njs
mmbr911l.pdf

7.1. Size:688K blue-rocket-elect
mmbr911.pdf

MMBR911(BR3DG911M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low noise, high gain. / Applications High frequency amplifier applications. / Equivalent Circuit /

9.1. Size:267K motorola
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR901LT1/DThe RF LineMMBR901LT1, T3NPN SiliconMPS901 MRF901High-Frequency TransistorMRF9011LT1Designed primarily for use in highgain, lownoise smallsignal amplifiers foroperation up to 2.5 GHz. Also usable in applications requiring fast switchingtimes. High CurrentGain Bandwidth ProductIC

9.2. Size:330K motorola
mmbr951 mrf951 mrf957 mrf9511.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR951ALT1/DThe RF LineMMBR951NPN SiliconMRF951Low Noise, High-FrequencyMRF957TransistorsMRF9511Designed for use in high gain, low noise smallsignal amplifiers. This seriesSERIESfeatures excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure

9.3. Size:53K motorola
mmbr931l.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR931LT1/DThe RF LineNPN SiliconMMBR931LT1High-Frequency TransistorDesigned primarily for use in lowpower amplifiers to 1.0 GHz. Ideal forpagers and other battery operated systems where power consumption iscritical. Available in tape and reel packaging options:T1 suffix = 3,000 units per reelRF AMPLIFIER

9.4. Size:54K motorola
mmbr920l.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1, T3High-Frequency Transistor. . . designed for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB

9.5. Size:54K motorola
mmbr920 .pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB Typ @ f =

9.6. Size:386K motorola
mrf941 mmbr941lt1 mrf9411lt1 mrf947.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR941LT1/DThe RF LineMMBR941NPN SiliconMRF941Low Noise, High-FrequencyMRF947TransistorsMRF9411Designed for use in high gain, low noise smallsignal amplifiers. This seriesfeatures excellent broadband linearity and is offered in a variety of packages.SERIES Fully Implanted Base and Emitter Structure

9.7. Size:60K njs
mmbr931l.pdf