MMBT200A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT200A
Código: N2A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MMBT200A
MMBT200A Datasheet (PDF)
pn200-a mmbt200-a.pdf
PN200 MMBT200PN200A MMBT200ACEC TO-92SOT-23 BBEMark: N2 / N2APNP General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 68.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 V
pn200a mmbt200.pdf
PN200A / MMBT200PNP General-Purpose AmplifierDescriptionThis device is designed for general-purpose amplifierapplications at collector currents to 300 mA. Sourcedfrom Process 68.CETO-92BSOT-23EBCFigure 1. PN200A Device Package Figure 2. MMBT200 Device Package Ordering InformationPart Number Marking Package Packing MethodPN200A PN200A TO-92 3L BulkMMBT200 N2 SOT-2
mmbt2045.pdf
MMBT2045SOT-23-6LPlastic-Encapsulate Transistors Dual 40V complementary transistorsFEATURESSOT-23-6L 40V complementary device High hFE Mounting cost and area can be cut in half MARKINGEQUIVALENT CIRCUIT PIN1Tr1 NPN and Tr2 PNP Absolute Maximum Ratings (Ta=25) Value Symbol Parameter Unit NPN PNPVCBO Collector-Base Voltage 40 -40 V VCEX Collector-Emitter Vo
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
