MMBT200A Datasheet. Specs and Replacement
Type Designator: MMBT200A 📄📄
SMD Transistor Code: N2A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT23
MMBT200A Substitution
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MMBT200A datasheet
PN200 MMBT200 PN200A MMBT200A C E C TO-92 SOT-23 B B E Mark N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V... See More ⇒
PN200A / MMBT200 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. C E TO-92 B SOT-23 EBC Figure 1. PN200A Device Package Figure 2. MMBT200 Device Package Ordering Information Part Number Marking Package Packing Method PN200A PN200A TO-92 3L Bulk MMBT200 N2 SOT-2... See More ⇒
MMBT2045 SOT-23-6LPlastic-Encapsulate Transistors Dual 40V complementary transistors FEATURES SOT-23-6L 40V complementary device High hFE Mounting cost and area can be cut in half MARKING EQUIVALENT CIRCUIT PIN1 Tr1 NPN and Tr2 PNP Absolute Maximum Ratings (Ta=25 ) Value Symbol Parameter Unit NPN PNP VCBO Collector-Base Voltage 40 -40 V VCEX Collector-Emitter Vo... See More ⇒
Detailed specifications: MMBT100A, MMBT1613, MMBT1613A, MMBT1613R, MMBT1711, MMBT1893, MMBT1893R, MMBT200, BC546, MMBT2218, MMBT2218A, MMBT2219, MMBT2219A, MMBT2221, MMBT2221A, MMBT2221AR, MMBT2221R
Keywords - MMBT200A pdf specs
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History: 2SA722
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