MMBT200A Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT200A
SMD Transistor Code: N2A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT23
MMBT200A Transistor Equivalent Substitute - Cross-Reference Search
MMBT200A Datasheet (PDF)
pn200-a mmbt200-a.pdf
PN200 MMBT200PN200A MMBT200ACEC TO-92SOT-23 BBEMark: N2 / N2APNP General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 68.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 V
pn200a mmbt200.pdf
PN200A / MMBT200PNP General-Purpose AmplifierDescriptionThis device is designed for general-purpose amplifierapplications at collector currents to 300 mA. Sourcedfrom Process 68.CETO-92BSOT-23EBCFigure 1. PN200A Device Package Figure 2. MMBT200 Device Package Ordering InformationPart Number Marking Package Packing MethodPN200A PN200A TO-92 3L BulkMMBT200 N2 SOT-2
mmbt2045.pdf
MMBT2045SOT-23-6LPlastic-Encapsulate Transistors Dual 40V complementary transistorsFEATURESSOT-23-6L 40V complementary device High hFE Mounting cost and area can be cut in half MARKINGEQUIVALENT CIRCUIT PIN1Tr1 NPN and Tr2 PNP Absolute Maximum Ratings (Ta=25) Value Symbol Parameter Unit NPN PNPVCBO Collector-Base Voltage 40 -40 V VCEX Collector-Emitter Vo
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: BF304 | JC547B | KT639-I1
