All Transistors. MMBT200A Datasheet

 

MMBT200A Datasheet and Replacement


   Type Designator: MMBT200A
   SMD Transistor Code: N2A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT23
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MMBT200A Datasheet (PDF)

 7.1. Size:877K  fairchild semi
 pn200-a mmbt200-a.pdf pdf_icon

MMBT200A

PN200 MMBT200PN200A MMBT200ACEC TO-92SOT-23 BBEMark: N2 / N2APNP General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 68.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 V

 7.2. Size:415K  onsemi
 pn200a mmbt200.pdf pdf_icon

MMBT200A

PN200A / MMBT200PNP General-Purpose AmplifierDescriptionThis device is designed for general-purpose amplifierapplications at collector currents to 300 mA. Sourcedfrom Process 68.CETO-92BSOT-23EBCFigure 1. PN200A Device Package Figure 2. MMBT200 Device Package Ordering InformationPart Number Marking Package Packing MethodPN200A PN200A TO-92 3L BulkMMBT200 N2 SOT-2

 8.1. Size:1685K  anbon
 mmbt2045.pdf pdf_icon

MMBT200A

MMBT2045SOT-23-6LPlastic-Encapsulate Transistors Dual 40V complementary transistorsFEATURESSOT-23-6L 40V complementary device High hFE Mounting cost and area can be cut in half MARKINGEQUIVALENT CIRCUIT PIN1Tr1 NPN and Tr2 PNP Absolute Maximum Ratings (Ta=25) Value Symbol Parameter Unit NPN PNPVCBO Collector-Base Voltage 40 -40 V VCEX Collector-Emitter Vo

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History: AUY19-3 | KT8255A | BC859W | 2SC4370AP | 2SD471 | JA100 | AC138

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