2N4401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4401

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.31 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 135 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 250 MHz

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hfe): 100

Paquete / Caja (carcasa): TO92

Búsqueda de reemplazo de transistor bipolar 2N4401

2N4401 Datasheet (PDF)

..1. 2n4400 2n4401.pdf Size:303K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4400/DGeneral Purpose Transistors2N4400NPN Silicon*2N4401*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1

..2. 2n4401 3.pdf Size:52K _philips

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N4401NPN switching transistor1999 Apr 23Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor 2N4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter Industr

..3. 2n4401 mmbt4401.pdf Size:92K _fairchild_semi

2N4401 MMBT4401CEC TO-92BSOT-23BEMark: 2XNPN General Pupose AmplifierThis device is designed for use as a medium power amplifier andswitch requiring collector currents up to 500 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 6.0

..4. umt4401 sst4401 mmst4401 2n4401.pdf Size:91K _rohm

UMT4401 / SST4401 / MMST4401 / 2N4401TransistorsNPN Medium Power Transistor(Switching)UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units : mm) Features2.00.2UMT44011.30.1 0.90.11) BVCEO>40V (IC=1mA)0.65 0.65 0.2 0.70.1(1) (2)2) Complements the UMT4403 / SST4403 / MMST44030~0.1/ PN4403.(3)(1) Emitter(2) Base0.3+0.1 0.150.05ROHM : UM

..5. 2n4400 2n4401.pdf Size:63K _central

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

..6. 2n4401.pdf Size:212K _mcc

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2N4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mWatts of Power DissipationPurpose Amplifier Through Hole Package Epoxy meet

..7. 2n4401.pdf Size:195K _onsemi

2N4401General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO 40 Vdc1Collector - Base Voltage VCBO 60 VdcEMITTEREmitter - Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipation PD@ TA = 25C

..8. 2n4401.pdf Size:207K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9

..9. 2n4401.pdf Size:274K _auk

2N4401NPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application CFeatures B Low Leakage current Low collector saturation voltage enabling Elow voltage operation Complementary pair with 2N4403 TO-92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO-92Absolute maximum ratings T

..10. 2n4401.pdf Size:320K _secos

2N4401NPN TransistorElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2FeaturesPower Dissipationo MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO 60VCollector-Emitter Voltage VCEO 40VEmitter-Base Voltage

..11. 2n4401.pdf Size:633K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Value Unit Parameter 1.EMILTTER Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 V2.BASE VEBO Emitter-Base Voltage 6 V 3. COLLECTOR Collect

..12. 2n4401.pdf Size:398K _lge

2N4401(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value Units Parameter Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VVEBO Emitter-Base Voltage 6 V Collector Current -Continuous IC 600 mACollector Power dissipation PC 0.625

..13. 2n4401.pdf Size:1006K _wietron

2N4401General Purpose TransistorsNPN SiliconTO-92 FEATURES 11. EMITTER 2 Power dissipation 32. BASE PCM : 0.625 W Tamb=25 3. COLLECTOR Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJTstg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specifie

..14. 2n4401.pdf Size:928K _blue-rocket-elect

2N4401 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High current, Low voltage. / Applications I 500mA CMedium power amplifier and switch requiring collector currents up t

..15. 2n4401.pdf Size:317K _first_silicon

SEMICONDUCTOR2N4401TECHNICAL DATAGeneral Purpose TransistorORDERING INFORMATIONDevice Marking Shipping32N4401 2X 3000/Tape & Reel21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage V 40 VdcCEOCollectorBase Voltage V 60 VdcCBOEmitterBase Voltage V 6.0 VdcEBO3COLLECTORCollector Current Continuous I 600 mAdcC1BASE

..16. 2n4401.pdf Size:1500K _kexin

SMD Type TransistorsNPN Transistors2N4401TO-92Unit: mm+0.254.58 0.15 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V0.46 0.10+0.101.27TYP 1.27TYP 0.38 0.051 2 3[1.27 0.20] [1.27 0.20]3.60 0.201. Emitter2. Base(R2.29)3. Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

..17. 2n4265 2n4400 2n4401 2n4402 2n4403 2n4409 2n4410 2n4424 2n4425 2n4951 2n4952 2n4953 2n4954 2n5087 2n5088 2n5089.pdf Size:1285K _sprague

..18. 2n4401.pdf Size:188K _inchange_semiconductor

isc Silicon NPN Power Transistor 2N4401DESCRIPTIONWith TO-92 packagingVery high DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emi

0.1. 2n4400-2n4401.pdf Size:48K _samsung

2N4400/4401 NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 VCollector Current IC 600 mACollector Dissipation PC 6

0.2. 2n4401bu 2n4401tf 2n4401tfr 2n4401ta 2n4401tar mmbt4401.pdf Size:381K _onsemi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.3. 2n4401-d.pdf Size:195K _onsemi

0.4. 2n4401g.pdf Size:207K _utc

0.5. 2n4401l.pdf Size:207K _utc

0.6. 2n4401sc.pdf Size:520K _kec

SEMICONDUCTOR 2N4401SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURES Complementary to the 2N4403SCDIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90J 0.10K 0.00 ~ 0.10L 0.55M 0.20 MINMAXIMUM RATING (Ta=25)N 1.00+0.20/-0.10CHARAC

0.7. h2n4401.pdf Size:53K _hsmc

Spec. No. : HE6215HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2002.02.22MICROELECTRONICS CORP.Page No. : 1/5H2N4401NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N4401 is designed for general purpose switching and amplifier applications.FeaturesTO-92 Complementary to H2N4403 High Power Dissipation: 625 mW at 25C High DC Current Gain: 100-300 at 150

0.8. 2n4401a3.pdf Size:263K _cystek

Spec. No. : C203A3 Issued Date : 2003.06.06 CYStech Electronics Corp.Revised Date : 2011.12.28 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor 2N4401A3Description The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 0.2V(typ.) at I /I = 500mA/50mA C

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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