2N4401 Specs and Replacement
Type Designator: 2N4401
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2N4401 datasheet
..1. Size:303K motorola
2n4400 2n4401.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4400/D General Purpose Transistors 2N4400 NPN Silicon * 2N4401 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage ... See More ⇒
..2. Size:52K philips
2n4401 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistor 2N4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter Industr... See More ⇒
..3. Size:92K fairchild semi
2n4401 mmbt4401.pdf
2N4401 MMBT4401 C E C TO-92 B SOT-23 B E Mark 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 ... See More ⇒
..4. Size:91K rohm
umt4401 sst4401 mmst4401 2n4401.pdf
UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units mm) Features 2.0 0.2 UMT4401 1.3 0.1 0.9 0.1 1) BVCEO>40V (IC=1mA) 0.65 0.65 0.2 0.7 0.1 (1) (2) 2) Complements the UMT4403 / SST4403 / MMST4403 0 0.1 / PN4403. (3) (1) Emitter (2) Base 0.3+0.1 0.15 0.05 ROHM UM... See More ⇒
..6. Size:212K mcc
2n4401.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N4401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mWatts of Power Dissipation Purpose Amplifier Through Hole Package Epoxy meet... See More ⇒
..7. Size:195K onsemi
2n4401.pdf
2N4401 General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO 40 Vdc 1 Collector - Base Voltage VCBO 60 Vdc EMITTER Emitter - Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation PD @ TA = 25 C ... See More ⇒
..8. Size:207K utc
2n4401.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free 2N4401L Halogen-free 2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 2N4401-T9... See More ⇒
..9. Size:274K auk
2n4401.pdf
2N4401 NPN Silicon Transistor Descriptions PIN Connection General purpose application Switching application C Features B Low Leakage current Low collector saturation voltage enabling E low voltage operation Complementary pair with 2N4403 TO-92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO-92 Absolute maximum ratings T... See More ⇒
..10. Size:320K secos
2n4401.pdf
2N4401 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55 0.2 3.5 0.2 Features Power Dissipation o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage ... See More ⇒
..11. Size:633K jiangsu
2n4401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Value Unit Parameter 1.EMILTTER Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V 2.BASE VEBO Emitter-Base Voltage 6 V 3. COLLECTOR Collect... See More ⇒
..12. Size:398K lge
2n4401.pdf
2N4401(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value Units Parameter Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V VEBO Emitter-Base Voltage 6 V Collector Current -Continuous IC 600 mA Collector Power dissipation PC 0.625 ... See More ⇒
..13. Size:1006K wietron
2n4401.pdf
2N4401 General Purpose Transistors NPN Silicon TO-92 FEATURES 1 1. EMITTER 2 Power dissipation 3 2. BASE PCM 0.625 W Tamb=25 3. COLLECTOR Collector current ICM 0.6 A Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range TJ Tstg -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specifie... See More ⇒
..14. Size:928K blue-rocket-elect
2n4401.pdf
2N4401 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High current, Low voltage. / Applications I 500mA C Medium power amplifier and switch requiring collector currents up t... See More ⇒
..15. Size:210K semtech
2n4400 2n4401.pdf
2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 60 V Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO Emitter Base Vol... See More ⇒
..16. Size:317K first silicon
2n4401.pdf
SEMICONDUCTOR 2N4401 TECHNICAL DATA General Purpose Transistor ORDERING INFORMATION Device Marking Shipping 3 2N4401 2X 3000/Tape & Reel 2 1 MAXIMUM RATINGS SOT 23 Rating Symbol Value Unit Collector Emitter Voltage V 40 Vdc CEO Collector Base Voltage V 60 Vdc CBO Emitter Base Voltage V 6.0 Vdc EBO 3 COLLECTOR Collector Current Continuous I 600 mAdc C 1 BASE ... See More ⇒
..17. Size:1500K kexin
2n4401.pdf
SMD Type Transistors NPN Transistors 2N4401 TO-92 Unit mm +0.25 4.58 0.15 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V 0.46 0.10 +0.10 1.27TYP 1.27TYP 0.38 0.05 1 2 3 [1.27 0.20] [1.27 0.20] 3.60 0.20 1. Emitter 2. Base (R2.29) 3. Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector... See More ⇒
..19. Size:188K inchange semiconductor
2n4401.pdf
isc Silicon NPN Power Transistor 2N4401 DESCRIPTION With TO-92 packaging Very high DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electronic ignition Alternator regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emi... See More ⇒
0.1. Size:48K samsung
2n4400-2n4401.pdf
2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 40V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 6... See More ⇒
0.2. Size:195K onsemi
2n4401-d.pdf
2N4401 General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO 40 Vdc 1 Collector - Base Voltage VCBO 60 Vdc EMITTER Emitter - Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation PD @ TA = 25 C ... See More ⇒
0.3. Size:381K onsemi
2n4401bu 2n4401tf 2n4401tfr 2n4401ta 2n4401tar mmbt4401.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
0.4. Size:207K utc
2n4401g.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free 2N4401L Halogen-free 2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 2N4401-T9... See More ⇒
0.5. Size:207K utc
2n4401l.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free 2N4401L Halogen-free 2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 2N4401-T9... See More ⇒
0.6. Size:520K kec
2n4401sc.pdf
SEMICONDUCTOR 2N4401SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES Complementary to the 2N4403SC DIM MILLIMETERS _ + A 2.90 0.1 2 3 B 1.30+0.20/-0.15 C 1.30 MAX 1 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 0.10 L 0.55 M 0.20 MIN MAXIMUM RATING (Ta=25 ) N 1.00+0.20/-0.10 CHARAC... See More ⇒
0.7. Size:53K hsmc
h2n4401.pdf
Spec. No. HE6215 HI-SINCERITY Issued Date 1992.09.22 Revised Date 2002.02.22 MICROELECTRONICS CORP. Page No. 1/5 H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N4401 is designed for general purpose switching and amplifier applications. Features TO-92 Complementary to H2N4403 High Power Dissipation 625 mW at 25 C High DC Current Gain 100-300 at 150... See More ⇒
0.8. Size:263K cystek
2n4401a3.pdf
Spec. No. C203A3 Issued Date 2003.06.06 CYStech Electronics Corp. Revised Date 2011.12.28 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor 2N4401A3 Description The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 0.2V(typ.) at I /I = 500mA/50mA C... See More ⇒
Detailed specifications: 2N4397
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.
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