MMBT4126
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT4126
Código: C3_K2B_ZF
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35
W
Tensión colector-base (Vcb): 25
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar MMBT4126
MMBT4126
Datasheet (PDF)
..1. Size:81K fairchild semi
2n4126 mmbt4126.pdf 
2N4126 MMBT4126CEC TO-92B BSOT-23EMark: ZFPNP General Purpose AmplifierThis device is designed for general purpose amplifier and switch-ing applications at collector currents to 10 A as a switch and to100 mA as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base
..2. Size:339K diodes
mmbt4126.pdf
MMBT4126 25V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case Material: Molded plastic, Green Molding Compound; Complementary NPN Type: MMBT4124 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &
0.1. Size:154K onsemi
mmbt4126lt1.pdf
MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 V COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Ba
0.2. Size:183K onsemi
mmbt4126lt1g.pdf
MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1 www.onsemi.com ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 VCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Base
7.1. Size:95K fairchild semi
2n4124 mmbt4124.pdf
2N4124 MMBT4124CETO-92CB BSOT-23EMark: ZCNPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo
7.2. Size:324K diodes
mmbt4124.pdf
MMBT4124 25V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 25V Case: SOT23 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Type: MMBT4126 UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J
7.3. Size:144K onsemi
mmbt4124lt1.pdf
MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHER
7.4. Size:148K onsemi
mmbt4124lt1g.pdf
MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHERMAL
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