Биполярный транзистор MMBT4126 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMBT4126
Маркировка: C3_K2B_ZF
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT23
MMBT4126 Datasheet (PDF)
2n4126 mmbt4126.pdf
2N4126 MMBT4126CEC TO-92B BSOT-23EMark: ZFPNP General Purpose AmplifierThis device is designed for general purpose amplifier and switch-ing applications at collector currents to 10 A as a switch and to100 mA as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base
mmbt4126.pdf
MMBT4126 25V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case Material: Molded plastic, Green Molding Compound; Complementary NPN Type: MMBT4124 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &
mmbt4126lt1.pdf
MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 V COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Ba
mmbt4126lt1g.pdf
MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1 www.onsemi.com ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 VCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Base
2n4124 mmbt4124.pdf
2N4124 MMBT4124CETO-92CB BSOT-23EMark: ZCNPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo
mmbt4124.pdf
MMBT4124 25V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 25V Case: SOT23 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Type: MMBT4126 UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J
mmbt4124lt1.pdf
MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHER
mmbt4124lt1g.pdf
MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHERMAL
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
